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| MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE B D X QX QX Z - M5 THD (7 TYP.) S N GuP EuP GvP EvP GwP EwP P R L C N P P GuN EuN GvN EvN GwN EwN J U N V W A E T G F K U AA M M M M AA Y - DIA. (4 TYP.) TAB #110, t = 0.5 H V P GuP EuP U GvP EvP V GwP EwP W GwN EwN N P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100TF-24H is a 1200V (VCES), 100 Ampere Six-IGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 24 GuN EuN N GvN EvN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.21 4.02 3.5430.01 3.150.01 2.01 1.38 1.28 1.26 Max. 1.18 0.98 0.96 0.79 0.67 Millimeters 107.0 102.0 90.00.25 80.00.25 51.0 35.0 32.5 32.0 Max 30.0 25.0 24.5 20.0 17.0 Dimensions P Q R S T U V X Y Z AA Inches 0.57 0.55 0.47 0.43 0.39 0.33 0.30 0.24 0.22 M5 Metric 0.08 Millimeters 14.5 14.0 12.0 11.0 10.0 8.5 7.5 6.0 5.5 M5 2.0 Sep.1998 MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM100TF-24H -40 to 150 -40 to 125 1200 20 100 200* 100 200* 780 1.47 ~ 1.96 1.47 ~ 1.96 830 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V IC = 100A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.5 2.25 500 - Max. 1.0 0.5 7.5 3.4** - - 3.5 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 100A, diE/dt = -200A/s IE = 100A, diE/dt = -200A/s VCC = 600V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.74 Max. 20 7 4 250 350 300 350 250 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.16 0.35 0.025 Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 15 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 12 160 VGE = 20V 11 160 4 120 10 120 3 80 80 2 40 7 9 8 40 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 40 80 120 160 200 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25C EMITTER CURRENT, IE, (AMPERES) 7 5 3 2 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 IC = 200A Cies 101 6 IC = 100A 102 7 5 3 2 4 Coes 100 2 IC = 40A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 7 1.0 VGE = 0V Cres 1.5 2.0 2.5 3.0 3.5 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) 103 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 100A SWITCHING TIME, (ns) tf td(off) td(on) 16 VCC = 400V VCC = 600V 12 102 tr 102 t rr Irr 101 8 VCC = 600V VGE = 15V RG = 3.1 Tj = 125C di/dt = -200A/sec Tj = 25C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 200 400 600 800 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.16C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.35C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
Price & Availability of CM100TF-24H
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